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Product Name: |
Auto plasma etcher
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Supply Ability: |
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Related proudcts |
cleaning equipment, cleaner, plasma cleaner, |
Specifications |
W950mm*H1700mm*D950mm |
Price Term: |
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Port of loading: |
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Minimum Order |
1 |
Unit Price: |
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Summarize:
1.The principle of the plasma etching machine is utilize the radio frequency radiation to let O,Ar,Nitrogen,carbon tetrafluoride etc. gas to create , high reactivity plasma response with device and become volatile compound, then vacuum system will clear away the volatile compound.
2..The plasma etching machine is applied to etch the silicon phosphor layer of the wafer edge, the surface and the edge of the wafer both spread the phosphor when spreading, it can lead the positive and negative poles of the wafers to short out by edge breakover.So must clear away the speeded the silicon phosphor layer (about 1-3micron) of the wafer edge. The wafers rotate horizontal, the admission gas are carbon tetrafluoride, O and Ar.The principle is under the discharge conditions,the admission gas carbon tetrafluoride,O and Ar response with silicon compound of the wafersĄŻ edge and generate wafers, Will be removed with air-current when the reaction become powder and gas state. |
Company: |
QiTian Automatical Equipment CO.,Ltd
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Contact: |
Mr. boris chuang |
Address: |
Dongguan No. 8 Building, Fuzhu 2nd Street, Zhangyang Community, Zhangmutou Town |
Postcode: |
523636 |
Tel: |
86-0769-38834566 |
Fax: |
86-0769-87796169 |
E-mail: |
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